preliminary RT3C66M dual transistor for differential am plify application silicon npn epitaxial type i saha y a electronics corporatio n preliminary noticethis is not a fi nal specification some parametric are subject to change. description RT3C66M is a sillicon npn epitaxial type dual transistor. it is designed for differe ntial amplify application. feature high vceo vceo=160v good two elements characteristics h fe1 /h fe2 =1.0 typ v be1 -v be2 =2mv typ application for differential amplify application. outline drawing unit mm m aximum rating (ta=25 ) (tr1 , tr2.) symbol parameter rating unit v cbo collector to base voltage 180 v v ebo emitter to base voltage 6 v v ceo collector to emitter voltage 160 v i cm peak collector current 200 ma i c collector current 100 ma p t total allowance dissipation(ta=25) 200 mw t j junction temperature 150 t stg storage temperature -55150 marking e c j 2 3 6 5 4 . 00.1 0.7 0.9 1.25 2.1 0.65 0.65 2.0 0.24 0.13 terminal connector ? emitter1 ? base1 ? collector2 ? emitter2 ? base2 :collector1 jeita sc-88 jedec tr1 tr2
preliminary RT3C66M dual transistor for differential am plify application silicon npn epitaxial type i saha y a electronics corporatio n preliminary noticethis is not a fi nal specification some parametric are subject to change. electrical characteristics (ta=25 ) (tr1, tr2.) symbol parameter test conditions limits unit min typ max v (br)cbo c to b break down voltage i c =100ai e =0a 180 - - v v (br)ebo e to b break down voltage i e =10ai c =0a 6 - - v v (br)ceo c to e break down voltage i c =1mar be = 160 - - v i cbo collector cut off current v cb =120vi e =0a - - 100 na i ebo emitter cut off current v eb =4vi c =0a - - 100 na 1 dc forward current gain1 vce=5vi c =1ma 72 - - - 2 dc forward current gain2 vce=5vi c =10ma 72 - 330 - 3 dc forward current gain3 vce=5vi c =50ma 27 - - - vce(sat)1 c to e saturation voltage1 i c =10mai b =1ma - - 0.15 v vce(sat)2 c to e saturation voltage2 i c =50mai b =5ma - - 0.2 v vbe(sat)1 b to e saturation voltage1 i c =10mai b =1ma - - 1.0 v vbe(sat)2 b to e saturation voltage2 i c =50mai b =5ma - - 1.0 v vbe1-vbe2 (vbe1:tr1,vbe2:tr2) b-e voltage differential vce=5vi c =1ma - 2 10 mv hfe1/hfe2 (hfe1:tr1,hfe2:tr2) dc forward current gain raito vce=5vi c =1ma 0.9 1.0 1.1 - ft gain bandwidth product vce=10vi e =-10ma 100 - 300 mhz cob collector output capacitance vcb=10vi e =0af=1mhz - 1.7 6 pf cib emitter input capacitance veb=0.5vi c=0af=1mhz - - 20 pf
preliminary RT3C66M dual transistor for differential am plify application silicon npn epitaxial type i saha y a electronics corporatio n preliminary noticethis is not a fi nal specification some parametric are subject to change. typical characteristics (tr1,tr2.) 0 50 100 150 200 250 0 25 50 75 100 125 150 total allowance dissipation p t (mw) ambient temperature ta () total allowance dissipation- ambient temperature 10 100 1000 0.01 0.1 1 10 100 d c f o r w a r d cu r r e n t ga i n h f e (- ) collector current ic(ma) d c f o r w a r d cu r r e n t ga i n v s . collector current vce=5v 85 25 -40 0.01 0.1 1 10 100 00.511.5 collector current ic(ma) base to emitter voltage vbe (v) common emitter transfer vce=5v 25 85 -40 0.01 0.1 1 0.01 0.1 1 10 100 collector to emittersaturation voltage vce(sat) v) collector current ic(ma) collector to emittersaturation voltage vs. collector current ic/ib=10 85 25 -40 0.1 1 10 0.01 0.1 1 10 100 base to emittersaturation voltage vbe(sat) v) collector current ic(ma) base to emittersaturation voltage vs. collector current ic/ib=10 85 25 -40
preliminary RT3C66M dual transistor for differential am plify application silicon npn epitaxial type i saha y a electronics corporatio n preliminary noticethis is not a fi nal specification some parametric are subject to change. 1 10 100 1000 0.1 1 10 100 gain band width product t (mh) emitter current ie (a) gain band width product vs. emitter current ta=25 vce=10v 1 10 0.1 1 10 100 collector output capacitance cob (pf) collector to base voltage vcb (v) collector output capacitance vs. collector to base voltage ta=25 f=1mhz 1 10 100 0.1 1 10 emitter intput capacitance cib (pf) emitter to base voltage veb (v) emitter input capacitance vs. emitter to base voltage ta=25 f=1mhz
6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. oct.2013
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